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LQ821 Datasheet, Polyfet RF Devices

LQ821 transistor equivalent, silicon gate enhancement mode rf power ldmos transistor.

LQ821 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 35.85KB)

LQ821 Datasheet
LQ821
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 35.85KB)

LQ821 Datasheet

Features and benefits

low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRA.

Application

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback .

Image gallery

LQ821 Page 1 LQ821 Page 2

TAGS

LQ821
SILICON
GATE
ENHANCEMENT
MODE
POWER
LDMOS
TRANSISTOR
Polyfet RF Devices

Manufacturer


Polyfet RF Devices

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